Products

High power light source chip

Description:

  • AlGaInAs MQW(Multiple Quantum Well)
  • DFB(Distributed-Feedback) LD(Laser Diode)
  • Single mode
  • Edge-emitting
  • Low threshold current
  • High output power
  •  Operating temperature -5℃ to 85℃

Applications:

  • Fiber laser seed source

The laser design is a ridge structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. This high performance
and high reliability laser is suitable for Lithium Niobate waveguide, Silicon Photons, datacenter and 5G fronthaul.

High-power light sourceWork conditionItemsSupport Temperature
Silicon photonics, Lithium Niobate (LiNbO₃), Data Center, 5G Front-HaulCW1270-1330 CWDM 50mW~100mWC-Temp
Silicon photonics, Lithium Niobate (LiNbO₃)CW1310nm 100mW~200mWC-Temp
Silicon photonics, Lithium Niobate (LiNbO₃), Data Center, 50GPONCWO-band DWDM 100mWTEC CONTROL(0~70℃)
Silicon photonics, Lithium Niobate (LiNbO₃), Data Center, Optical computing、External modulation light source for ER4CWLWDM 100mWTEC CONTROL(0~70℃)
Silicon photonics, Lithium Niobate (LiNbO₃), Data Center, CoherentCWC-band DWDM 80mWTEC CONTROL(0~70℃)
Silicon photonics, Lithium Niobate (LiNbO₃), Data Center, Coherent, FMCW LiDARCWC-band DWDM 150mWTEC CONTROL(0~70℃)